Syllabus
UNIT-I
Semi Conductor Theory: Energy Levels, Intrinsic and Extrinsic Semiconductors, Mobility, Diffusion and Drift current. Hall Effect, Characteristics of P-N Junction diode, Parameters and Applications.
Rectifiers: Half wave and Full wave Rectifiers (Bridge, center tapped) with and without filters, ripple regulation and efficiency. Zener diode regulator.
UNIT-II
Bipolar Junction Transistor: BJT, Current components, CE, CB, CC configurations, characteristics, Transistor as amplifier. Analysis of CE,CB,CC Amplifiers(qualitative treatment only).
JEET: Construction and working, parameters, CS, CG, CD Characteristics, CS amplifier.
UNIT-III
Feedback Concepts – Properties of Negative Feedback Amplifiers, Classification, Parameters .
Oscillators – Barkhausen Criterion, LC Type and RC Type Oscillators and Crystal Oscillators. (Qualitative treatment only)
UNIT-IV
Operational Amplifiers – Introduction to OP Amp, characteristics and applications – Inverting and Non-inverting Amplifiers, Summer, Integrator, Differentiator, Instrumentation Amplifier.
Digital Systems: Basic Logic Gates, half, Full Adder and Subtractors.
UNIT-V
Data Acquisition systems: Study of transducer (LVDT, Strain gauge, Temperature, Force).
Photo Electric Devices and Industrial Devices: Photo diode, Photo Transistor, LED, LCD, SCR, UJT Construction and Characteristics only.
Display Systems: Constructional details of C.R.O and Applications.